RESUMO
In this work, an analytical model is developed for DM-DG-TMD-FET- based Biosensor including Fringing-field effects. The Analytical model has been developed for two different Device structures, namely Device structure-1 (without a gate above the nano-cavity) and Device structure-2 (with a gate above the nano-cavity) based on modulation of the dielectric constant of biomolecules in the nano-cavity region. The proposed model has been validated against both numerical quantum simulation results with the help of a few fitting parameters and it also agrees with the 2-dimensional numeric simulator SILVACO TCAD used in this work. The presence/absence of biomolecules has been detected by the metric of threshold voltage sensitivity [Formula: see text] and drain current [Formula: see text] for the neutral as well as charged biomolecules. Sensitivities of partially filled nano-cavities arising out of steric hindrance in both the biosensors are compared. Optimization of device dimensions has also been included in this work to enhance the sensitivity of the biosensors. It has been witnessed that the sensitivity of the proposed biosensor is [Formula: see text] 100% higher in Device structure-1 for neutral biomolecules with dielectric constant [Formula: see text] = 12, when compared to Device structure-2 for fully filled cavities. Whereas for the charged biomolecules, Device structure-1 shows [Formula: see text] 50% enhanced sensitivity than Device structure-2 for [Formula: see text] [Formula: see text]. Device structure-1 demonstrates [Formula: see text]120% higher sensitivity than Device structure-2 with partially filled cavities (i.e. 66% filled cavity). Finally, benchmarking of the proposed biosensor is presented with contemporary, state-of-the-art biosensors and it is highlighted that [Formula: see text] FET-based biosensor emerges with a superior sensitivity of [Formula: see text] = 0.81 V for [Formula: see text].
RESUMO
In this work, aspect ratio of various intercalation doped MLGNR interconnects are optimized using a numerical approach to achieve improved performance and reliability. A numerical optimization method is presented to estimate optimized aspect ratio considering combined effects of performance, noise and reliability metrics for any arbitrary nano interconnect system. This approach is cost effective and will be extremely useful to industry for selection of aspect ratio of interconnects as it is a non-SPICE method and reduces fabrication iterations for achieving desired performance and reliability. Our numerical method suggests that by minimizing the figure of merit (i.e. Noise Delay Power Product / Breakdown Power [Formula: see text] ratio), aspect ratio of FeCl3 doped MLGNR interconnect is optimized at 0.987, 0.61 and 0.579 for local, intermediate and global level, respectively at 7 nm node. Comparing the optimized performance metrics in this work with the estimated metrics at prescribed aspect ratio by IRDS roadmap, delay, noise delay product (NDP), power delay product (PDP), [Formula: see text] ratio and figure of merit are improved by ([Formula: see text]2% and [Formula: see text]25%), ([Formula: see text]44% and [Formula: see text]50%), ([Formula: see text]9% and [Formula: see text]48%), ([Formula: see text]6% and [Formula: see text]48%) and ([Formula: see text]49% and [Formula: see text]68%) for 10 [Formula: see text] m and 1 mm long Fecl3 doped MLGNR interconnect, respectively at 7 nm node. Increase in contact resistance leads to significant decrease in performance and increase in optimized aspect ratio of local Fecl3 doped MLGNR interconnect. Scaling down from 10 to 7 nm node results in increase of optimized aspect ratio in all levels of interconnects. Even though the performance of MLGNR degrades with scaling down but when compared to copper, the performance improves with technology scaling. Finally, this study provides circuit designers a detailed guideline for selecting an optimized aspect ratio for achieving better performance, power efficiency and reliability in doped MLGNR interconnects.
